Каква е разликата в ецването на монокристален и поликристален силиций ?

[cherva]

Каква е разликата в ецването на монокристален и поликристален силиций ?

[fantom4e]

Гугъл?

1. Introduction

Deposition and etching of polycrystalline silicon are

important steps of CMOS technology where polysilicon

is used as a gate material. Plasmas containing fluorine

(for example, SF6 ) are widely used for silicon etching

[1-3]. Most of studies concerning silicon etching by SF6

were performed for monocrystalline silicon. However,

etching characteristics of polysilicon may differ

significantly from those of monosilicon [4-9]. In

particular, one can expect that structural properties of

polysilicon (grain size, porosity, surface roughness) have

a considerable effect on etching. Furthermore, the

influence of doping on etching characteristics can be

more pronounced for polysilicon [10,11], as in this case

the doping material is believed to be more concentrated

at grain surfaces.